Determining Chemically and Spatially Resolved Atomic Profile of Low Contrast Interface Structure with High Resolution
نویسندگان
چکیده
We present precise measurements of atomic distributions of low electron density contrast at a buried interface using soft x-ray resonant scattering. This approach allows one to construct chemically and spatially highly resolved atomic distribution profile upto several tens of nanometer in a non-destructive and quantitative manner. We demonstrate that the method is sensitive enough to resolve compositional differences of few atomic percent in nano-scaled layered structures of elements with poor electron density differences (0.05%). The present study near the edge of potential impurities in soft x-ray range for low-Z system will stimulate the activity in that field.
منابع مشابه
Erratum: Determining Chemically and Spatially Resolved Atomic Profile of Low Contrast Interface Structure with High Resolution
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It was brought to the authors’ attention that the original paper contains the following errors. (i) We reported a 0.05% electron density contrast between silicon and boron carbide. There was a calculation error in computing this number and the correct contrast is 0.5%. This is one order of magnitude lower than what can be studied using hard x-ray reflectivity. Therefore, with this revised elect...
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